中图分类号：TN454 文献标志码：A DOI: 10.16157/j.issn.0258-7998.257153 中文引用格式： 张翔宇，张帅，赵宇，等. 基于扇出型晶圆级封装的X波段异构集成T/R模组研制[J]. 电子技术应用，2026，52(2)：15-23. 英文引用格式： Zhang Xiangyu，Zhang Shuai，Zhao Yu，et al. Design of X-band heterogeneous integrated T/R module based on fan-out wafer-level packaging[J]. Application of Electronic Technique，2026，52(2)：15-23.
Design of X-band heterogeneous integrated T/R module based on fan-out wafer-level packaging
Zhang Xiangyu，Zhang Shuai，Zhao Yu，Wu Hongjiang
The 13th Research Institute of China Electronics Technology
Abstract： Based on Fan-Out Wafer-Level Packaging (FOWLP) technology, a compact X-band quad-channel transceiver module was designed and fabricated. This module heterogeneously integrates chips manufactured using Complementary Metal-Oxide Semiconductor (CMOS) and Gallium Arsenide (GaAs) processes, enabling functionalities such as low-noise amplification, amplitude-phase control, and power amplification output for received RF signals. Within the module, interconnections and fan-out among chips are achieved through redistribution layers (RDL), while vertical connections to the printed circuit board (PCB) are realized via ball grid arrays (BGA). The final module dimensions are a mere 12.8 mm × 10.4 mm × 0.5 mm. Test results indicate that the module achieves a reception gain ≥27 dB, noise figure≤4 dB, transmission gain≥26.7 dB, and saturated output power ≥24 dBm. Furthermore, the RMS accuracy of the 4-bit digital attenuation≤1 dB, and the RMS accuracy of the 6-bit digital phase shifter≤6°, all meeting design expectations. By consolidating the characteristics of two distinct material chips on a high-density resin-based packaging platform, this module demonstrates superior performance.
Key words : wafer-level packaging；T/R microsystems；system-in-package；redistribution layer；advanced packaging technology；miniaturization
引言
T/R模组是相控阵系统的重要组成部分，其性能在很大程度上决定了相控阵系统整体的性能。当前相控阵中的T/R模组技术主要发展方向为高性能、小体积、轻质量和低成本[1]。随着电子信息技术不断发展，越来越多的电子设备终端采用了相控阵体制，作为相控阵系统中的关键器件，T/R模组通常集成了功率放大器、低噪声放大器、限幅器、数控移相器、数控衰减器等电路功能[2]。系统级封装(System in Package, SiP)是指将多种集成多种有源结构和无源结构集成在一个封装体内，能使产品在高集成密度的条件下保持优异性能。 T/R模组在相控阵系统中通常是许多子阵单元以阵列形式组合工作，所以其尺寸、功耗和增益等指标对整个系统的影响十分明显，因此系统级封装技术在T/R微系统领域应用优势明显。SiP具有小型化、高集成、低成本等诸多优势。随着电子信息技术的持续进步，对T/R模组SiP的性能要求将越来越高[3]。
本文基于FOWLP技术，设计了一款X波段四通道T/R模组。本次设计在塑封模组中集成了互补金属氧化物半导体(Complementary Metal Oxide Semiconductor，CMOS)和砷化镓两种工艺结构的芯片，整合发挥了CMOS芯片可实现高密度数字集成的特点，砷化镓高增益、低噪声的射频性能优势，以及FOWLP集成密度高、模组体积小的优点，信号的输入输出通过BGA植球实现。经测试验证，本次设计研制了一款高性能、低成本的四通道T/R模组，为今后FOWLP技术在T/R微系统领域的进一步应用提供了设计参考。
